M.I.Gritsenko, S.I.Kucheev,
M.V.Moshel
Reorientation of a homeotropically oriented nematic (5CB)
with De > 0 over a pore of dielectric film
in low-resistive
silicon-SiO2-nematic liquid crystal-ITO structure has been
investigated. The structure was excited by DC voltage with negative
polarity on the silicon substrate. It is shown that the reorientation
process includes two stages. The rapid one (0.1-1 s) takes place
in the vicinity of the pore on 5-10 mm long distance. During
a second slow stage (several minutes), the deformed region size in
the nematic layer grows to 150-200 mm in diameter and the
space pattern forms. These features of the nematic reorientation are
explained by the influence of the polarized charge and that injected
through pore on the electric field distribution at the pore.