Infrared spectroellipsometric characterization of the subsurface
layer and its electronic properties in disordered structures

L.V.Poperenko, A. Roeseler*


Taras Shevchenko University,
64 Volodymyrska St., 252033 Kyiv, Ukraine
*Institut fuer Spektrochemie und Angewandte Spektroskopie (ISAS),
Institutsteil Berlin, Adlershof, Rudower Chaussee 5, D-12489 Germany

Optical measurements according to scheme of Beattie-Conn  polarimetric method using Fourie spectrometer IFS-55 were carried out within spectral range 2-25 mm for samples of Fe- or Ni-based amorphous alloys at 4 orientations of the ribbon longitudinal axis relatively to the plane of light incidence. Having determined the deviations of ellipsometrical parameters for light reflected from the ribbon surface in dependence on its orientation in the own plane, the level of deformational strains changes in the subsurface layer of amorphous ribbons fabricated by rapid melt quenching method was estimated. The existence of elastic-stressed  state within subsurface layer for each ribbon side and the difference of characteristics  for such state in as-cast ribbons of amorphous alloys not only on both sides but also in dependence on the depth from each of these two surfaces was revealed. To find  the structural modification in disordered material, the Raman light scattering spectroscopic experiment was carried out, too. The observed two maxima in Raman light scattering spectra of these alloys provide the evidence for mere change in the photon density of states just below 200 cm-1. The deviation of the dielectric function  of such structures from the well-known Drude-like dependence
may be explained as a result of the appearance of weak electron localisation in the vicinity of the Fermi level.

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