Study of specific features of lanthanum, gallium and silicon oxides interaction in the course of lanthanum gallosilicate 3Ga5SiO14 charge synthesis

M.F.Dubovik, T.I.Korshikova, E.M.Proskurnya*


Institute for Single Crystals, National Academy of Sciences of Ukraine, 60 Lenin Ave., 310001 Kharkiv, Ukraine
*Kharkiv State Polytechnical University, 21 Frunze St., 310002 Kharkiv, Ukraine

Received August 14, 1998

The temperature interval of the intense interaction in the La2O3-Ga2O3-SiO2 system has been established. Conditions of the charge synthesis for La3Ga5SiO14 single crystals growing have been determined.

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