I.V.Pulyaeva , S.O.Tkachenko, L.E.Belenko, L.I.Gorodilova
Received January 28, 1999
Methods for silicon carbide analysis for carbide and free
carbon content, as well as for sulfur, oxygen and nitrogen impurities
content are proposed. The results of stoichiometric and non-stoichiometric
beta-SiC sample composition analysis has been presented.