Investigation of stoichiometry and gas-forming impurity content in silicon carbide

I.V.Pulyaeva , S.O.Tkachenko, L.E.Belenko, L.I.Gorodilova


Institute for Single Crystals, National Academy of Sciences of Ukraine, 60 Lenin Ave., Kharkiv 61001, Ukraine

Received January 28, 1999

Methods for silicon carbide analysis for carbide and free carbon content, as well as for sulfur, oxygen and nitrogen impurities content are proposed. The results of stoichiometric and non-stoichiometric beta-SiC sample composition analysis has been presented.

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