Structure and technology problems of A2B6 semiconductor films


Kharkiv State Polytechnical University, 21 Frunze St., 61002 Kharkiv, Ukraine

Received September 29, 1999

A new structure model has been proposed for chemical compounds of non-stoichiometric A2B6 thin films assuming the presence of crystals of multitwinned and heterophase stratification as well as of crystallographic planes stacks consisting of excess component atoms at layer interfaces. Problems are discussed associated with the procedures of correct structure determination of such films, physical factors of structure formation and possibilities for technologic controlling of the structure parameter.

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