Study of photoelectric processes in film heterosystems based on polycrystalline Cu-In-Se layers

B.T.Boyko, G.S.Khrypunov, V.R.Kopach, G.V.Yurchenko

Kharkiv State Polytechnical University, 21 Frunze St., 61002 Kharkiv, Ukraine

Received July 22, 1999

Spectral dependences of ZnO:Al film transmission coefficient have been studied in comparison with similar dependences of quantum efficiency coefficient, dark and light current-voltage characteristics of Mo/p-CuInSe2/n-CuIn3Se5/n-CdS/i-ZnO/n-ZnO:Al multilayer heterosystems and photoelectric processes in such polycrystal film solar cells have been analyzed. Forming i-ZnO and n-ZnO:Al layers at room substrate temperatures in Mo/p-CuInSe2/n-CuIn3Se5/n-CdS/i-ZnO/n-ZnO:Al photoelectric converters allowed to save the separating barrier with optimum diode characteristics. This provided the open circuit voltage at 0.517 V. The solar cell efficiency limitation at the level of 7 % has been shown to be due to a considerable light absorption by the CdS layer.

Previous | Contents Next