B.T.Boyko, G.S.Khrypunov, V.R.Kopach, G.V.Yurchenko

Received July 22, 1999

Spectral dependences of ZnO:Al film transmission coefficient have been studied in comparison with similar dependences of quantum efficiency coefficient, dark and light current-voltage characteristics of Mo/p-CuInSe₂/n-CuIn₃Se₅/n-CdS/i-ZnO/n-ZnO:Al multilayer heterosystems and photoelectric processes in such polycrystal film solar cells have been analyzed. Forming i-ZnO and n-ZnO:Al layers at room substrate temperatures in Mo/p-CuInSe₂/n-CuIn₃Se₅/n-CdS/i-ZnO/n-ZnO:Al photoelectric converters allowed to save the separating barrier with optimum diode characteristics. This provided the open circuit voltage at 0.517 V. The solar cell efficiency limitation at the level of 7 % has been shown to be due to a considerable light absorption by the CdS layer.

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