F.D.Kasimov, M.G.Abbasov, F.G.Agaev, M.R.Ragimov
Received November 9, 1998
Studying temperature and frequency dependences of electric
conductivity in low-doped polycrystalline silicon films of different
structure, it has been found that jump-like charge transfer along
localized states of grain interlayers takes place in a wide temperature
range along with barrier conductance across grain boundaries. The
jump-like conductivity has been shown to occur up to room temperatures
at the grain size of 0.5 mum and the volume concentration of
free carriers about 1014 cm-3.