Study of current transport features in low-doped polycrystalline silicon films

F.D.Kasimov, M.G.Abbasov, F.G.Agaev, M.R.Ragimov

Azerbaijan National Aerospace Agency, 159 Azadlyg Ave., 370106 Baku, Azerbaijan

Received November 9, 1998

Studying temperature and frequency dependences of electric conductivity in low-doped polycrystalline silicon films of different structure, it has been found that jump-like charge transfer along localized states of grain interlayers takes place in a wide temperature range along with barrier conductance across grain boundaries. The jump-like conductivity has been shown to occur up to room temperatures at the grain size of 0.5 mum and the volume concentration of free carriers about 1014 cm-3.

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