Quantitative model for forecasting changes in electric properties of direct gap semiconductors

G.P.Kovtun, A.I.Kondrik, A.A.Yatsenko

National Scientific Center "Kharkiv Institute for Physics and Technology", National Academy of Sciences of Ukraine, 1 Akademicheskaya St., 61108 Kharkiv, Ukraine

Received June 10, 1999

An improved multilevel model has been proposed for forecasting of property modifications in direct gap semiconductors, namely, the mobility, resistivity, and Fermi level position depending on concentration of multicharge donors and acceptors, amphoteric impurities of DA, DDA, and DAA types, their energy positions in the semiconductor band gap, structure and doping non-uniformity (accumulations of defects and impurity clusters) within a wide temperature range. An aplication program has been developed basing on the model. Physical properties of gallium arsenide have been simulated numerically, the five-level model has been compared to the improved one and the latter has been shown to offer some advantages. The influence of an EL-2 defect after an irradiation followed by a heat treatment on the main electrophysical parameters of gallium arsenide has been studied in a wide temperature range. The mobility variation within the 300<T<1100 temperature range has been considered theoretically as a function of EL-2 defects and clusters concentrations. The mechanisms of the defect influence on the mobility and resistivity are discussed.

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