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Funct. Mater. 2013; 20 (1): 10-14.

http://dx.doi.org/10.15407/fm20.01.010

Diffusion of chromium and impurity absorption in ZnS crystals

Yu.A.Nitsuk

I.Mechnikov National University, 2 Dvoryanskaya Str., 65082 Odesa, Ukraine

Abstract: 

ZnS:Cr single crystals obtained by diffusion doping are investigated. The spectra of optical density in the range of energies 0.3–3.8 eV are investigated. The chromium concentration in the studied crystals is determined using the magnitude of the shift of the absorption edge. Optical transitions determining the impurity absorption spectrum of ZnS:Cr single crystals are identified. The diffusion profile of Cr impurity is determined by measuring the relative optical density of crystals in the visible spectral region. At first, the diffusivities of Cr in ZnS crystals are calculated for temperatures of 1170–1320 K. At 1270 K, the diffusivity of Cr is 8· 10–10 cm2/s.

References: 

1. I.T.Sorokina, E.Sorokin, S.Mirov et al., Opt. Lett., 27, 1040 (2002). http://dx.doi.org/10.1364/OL.27.001040

2. K.Graham, V.V.Fedorov, S.B.Mirov et al., Quant. Electron., 34, 8 (2004). http://dx.doi.org/10.1070/QE2004v034n01ABEH002571

3. J.T.Vallin, G.A.Slack, S.Roberts, Phys. Rev. B,2, 4313 (1970). http://dx.doi.org/10.1103/PhysRevB.2.4313

4. J.Kreissl, H.-J.Schulz, J. Cryst. Growth., 161, 239 (1996). http://dx.doi.org/10.1016/0022-0248(95)00665-6

5. A.Zunger, Solid State Phys., 39, 276 (1986). http://dx.doi.org/10.1016/S0081-1947(08)60371-9

6. C.S.Kelley, F.Williams, Phys. Rev. B, 2, 3 (1970). http://dx.doi.org/10.1103/PhysRevB.2.3

7. Yu.V.Korostelin, V.I.Kozlovsky, A.S.Nasibov, P.V.Shapkin, J. Cryst. Growth., 197, 449 (1999). http://dx.doi.org/10.1016/S0022-0248(98)00742-8

8. Yu.I.Ukhanov, Optical Properties of Semiconductors, Nauka, Moscow (1977) [in Russian].

9. V.F.Agekyan, Fiz. Tverd. Tela, 44, 1921 (2002).

10. J.E.Huheey, Inorganic Chemistry, Harper & Row, New York (1970).

11. E.M.Wray, J.W.Allen, J. Phys. C: Solid State Phys., 4, 512 (1971). http://dx.doi.org/10.1088/0022-3719/4/4/012

12. M.G.Zhao, L.H.Xie, Mater. Sci. and Engin., B75, 72 (2000). http://dx.doi.org/10.1016/S0921-5107(00)00411-6

13. Yu.F.Vaksman, V.V.Pavlov, Yu.A.Nitsuk et al., Semiconductors, 39, 377 (2005). http://dx.doi.org/10.1134/1.1900247

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