Funct. Mater. 2013; 20 (1): 37-43.

Indium induced nanostructures on In4Se3(100) surface studied by scanning tunneling microscopy

P.V.Galiy[1], T.M.Nenchuk[1], A.Ciszewski[2],P.Mazur[2], S.Zuber[2], Ya.M.Buzhuk[1]

[1]Electronics Department, I.Franko Lviv National University, 79005 Lviv, Ukraine
[2]Institute of Experimental Physics, University of Wroclaw, 50-204 Wroclaw, Poland


Indium deposition leads to changes in the scanning tunneling microscopy (STM)-revealed (100) surface morphology of In4Se3 layered semiconductor with the formation of nanostructures, which are characterized by different dimensionality dependent on different crystal growth conditions. Preferable formation of nanodots in low and quasi one dimensional (1D) structures for the high bulk-conductivity crystals has been observed. The STM and scanning tunneling spectroscopy data enable us to consider that the dimensionality, shape and direction of the obtained indium deposition structures are induced by indium clusters available on the original, on-the-lattice-scale furrowed, ultra high vacuum (UHV) (100) cleavages of In4Se3 crystal due to the self-intercalation phenomenon.


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