Funct. Mater. 2013; 20 (1): 123-126.

The increase of crystal growing rate without damaging the smoothness of interface border


Institute for Single Crystals, STC "Institute for Single Crystals" National Academy of Sciences of Ukraine, 60 Lenin Ave., Kharkiv 61001, Ukraine 


This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.


1. W.A.Tiller. Crystal Growth from a Melt, in: The Art and Science of Growing Crystals, John Wiley & Sons, Inc., New York - London (1963).

2. W.A.Tiller., J.W.Rutter, K.A.Jackson, B.Chalmers, Acta Met., 8, 428 (1953).

3. W.W.Mullins, R.F.Sekerka, J. Appl. Phys., 35, 444 (1964).

4. S.V.Barannik, V.N.Kanishchev, Crystallography Rep., 54, 168 (2009).

5. I. R.Morris, W.C.Winegard, J. Cryst. Growth, 5, 361 (1969).

6. D.E.Ovsienko, V.V.Maslov, G.A.Afintsev, Crystallografiya, 22, 1042 (1977).

7. S.V.Barannik, V.N.Kanishchev, Functional Materials, 17, 224 (2010).

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