Funct. Mater. 2013; 20 (2): 145-148.

http://dx.doi.org/10.15407/fm20.02.145

Radiation damage of CsI:Eu crystals

A.Gektin, S.Vasyukov, N.Shiran, A.Belsky

[1]Institute for Scintillation Materials, STC "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine
[2]Universite Claude Bernard Lyon 1, 69622 Villeurbanne Cedex, France

Abstract: 

The problems of radiation damage and afterglow nature for CsI:Eu crystal are discussed. It was determined that the luminescence parameters depend on the X-ray irradiation conditions. Irradiation leads to emission suppression at doses less than 100 Gy when the induced absorption was not observed yet. Hole (VF and I3) and activator′ color centers formation lead to partial decrease of the intrinsic UV and the activator luminescence, but it is not the dominating process of the radiation-induced phenomenon. The reverse dependences of afterglow and Eu2+ luminescence on irradiation dose were detected. Radiation induced luminescence quenching is determined by a modification of the activator centers structure.

References: 

1. Inorganic Scintillators for Detector Systems, ed. by P.Lecoq, A.Annenkov, A.Gektin, M.Korzhik, C.Pedrini, Springer (2006).

2. A.V.Gektin, N.V.Shiran, in: Proc. "Scint. Materials: Engineering, Devices and Application", Kharkov, ISMA (2011), p.6.

3. T.Berger-Hrynova, in: Proc. "Scint. Materials: Engineering, Devices and Application", Kharkov, ISMA (2011), p.40.

4. A.Gektin, N.Shiran, A.Vasil′ev, A.Belsky,Functional Materials for Scintillation Technique and Medical Application, Kharkov, ISMA, 2012, 428 (in Russian)

5. A.Gektin, N.Shiran, in: Proc. Int. Conf. SCINT′97, Shanghai, China (1997), p.115.

6. N.Shiran, A.Gektin, S.Vasyukov et al., Functional Materials, 18, 438 (2011).

7. A.Gektin, N.Shiran, A.Belsky, S.Vasyukov, Opt. Mater., 34, 2017 (2012). http://dx.doi.org/10.1016/j.optmat.2012.02.010

8. A.M.Lebedynskiy, S.A.Vasyukov, A.V.Gektin et al., J. Appl. Spectrosc., 79, 583 (2012). http://dx.doi.org/10.1007/s10812-012-9643-x

9. H.J.Seo, W.S.Zhang, T.Tsuboi, J. Alloys and Comp., 344, 268 (2002). http://dx.doi.org/10.1016/S0925-8388(02)00366-3

10. H.Vrielinck, D.G.Zverev, P.Leblans, Phys. Rev., B 85, 144119 (2012). http://dx.doi.org/10.1103/PhysRevB.85.144119

11. N.V.Shiran, Functional Materials, 4, 35 (1997).

12. V.V.Kolotilin, V.I.Shtanko, Sol. State Phys., 26, 236 (1984).

13. G.O.Amolo, J.D.Comins, R.M.Erasmus, T.E.Derry, Nucl. Instr, Meth. Phys. Res., B 250, 359 (2006).

14. A.Gektin, N.Shiran, A.Belsky, A.Vasiliev, Nucl. Tracks Rad. .Meas., 21, 11 (1993). http://dx.doi.org/10.1016/1359-0189(93)90036-9

15. I.V.Garapyn, I.Z.Hud, B.V.Pavlyk, Ukr. Zh. Fiziki.,51, 287 (2006).

16. C.R.A.Catlow, K.M.Diller, L.W.Hobbs, Philos. Mag., A 42, 123 (1980). http://dx.doi.org/10.1080/01418618009365806

17. A.V.Gektin, V.Ya.Serebryanny, N.V.Shiran, Phys. Stat. Sol., A134, 351 (1992). http://dx.doi.org/10.1002/pssa.2211340205

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