Funct. Mater. 2013; 20 (2): 253-258.

Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire

E.A.Vovk, A.T.Budnikov, S.V.Nizhankovskyi, S.I.Kryvonogov, A.A.Krukhmalev, M.V. Dobrotvorskaya

Institute for Single Crystals, STC "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine


Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up to 1 nm. The morphology and element composition of AlN/sapphire surface at layer-by-layer removal of the nitridated layer were studied by the methods of atomic force microscopy and X-ray photoelectronic spectroscopy.


1. H.S.-ogly Kaltaev, N.S.Sidelnikova, S.V.Nizhankovskiy et al., Fizika i Tehnika Poluprovodnikov, 43, 1650 (2009).

2. J.H.Edgar et al., J. Cryst. Growth, 246, 187 (2002).

3. M.Bickermanna, S.Schmidta, B.M.Epelbauma et al., J. Cryst. Growth, 300, 299 (2007).

4. Y.Huaiyue, X.Xiangqian, L.Zhanhui et al., J. Semiconduct., 30, 023003 (2009).

5. U.S. Patent 7,037,838 (2006).

6. D.Zhuanga, J.H.Edgara, B.Strojekb et al., J. Cryst. Growth, 89, 262 (2004).

7. K.Uchida, A.Watanabe, F.Yano et al., J. Appl. Phys., 79, 3487 (1996).

8. Jong-Sik Paek, Kyoung-Kook Kim, Ji-Myon Lee et al., J. Cryst. Growth, 200, 55 (1999).

9. A.Rice, R.Collazo, J.Tweedie et al., J. Appl. Phys., 108, 043510 (2010).

10. S.V.Nizhankovskiy, A.A.Kruhmaljov, N.S.Sidelnikova et al., Fiz. Tverd. Tela, 54, 1777 (2012).

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