Funct. Mater. 2013; 20 (3): 284-289.
Optical and scintillation properties of CsI:In crystals
[1]Institute for Scintillation Materials, STC "Institute for Single Crystals",National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine
[2]National Centre for Nuclear Research, PL 05-400 Otwock-Swierk, Poland
[3]Institut Lumiere Matiere, Universite Claude Bernard Lyon 1, 69622 Villeurbanne Cedex, France
The work is dedicated to study of optical and scintillation properties of CsI:In crystals. Using the Bridgeman method a concentration row of CsI:In single crystals was grown with the dopant content from 10—4 to 10—1 mol. %. The segregation coefficient of In in CsI was estimated to be ~0.15. In CsI:In luminescence spectra one symmetric band is observed, peaking around 545 nm, with FWHM of 0.46 eV. Under intracenter excitation 1.9 μ s exponential decay was observed. The light yield under gamma excitation of 137Cs isotope (662 keV), measured with a shaping time of 10 μ s, was 27 000 photons/MeV. The radio-luminescence yield of CsI:In , measured by the current mode method, approached to that of CsI:Tl . Probably, this difference is connected with the presence of a stronger afterglow in CsI:In crystals.
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