Funct. Mater. 2015; 22 (4): 423-428.
Engineering of mixed Bi4(GexSi1-x)3O12 scintillation crystals
[1] Institute for Scintillation Materials, STC "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine
[2] Joint Institute for Nuclear Research, 6 Joliot-Curie Str., 141980 Dubna, Moscow region, Russia
A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si4+/Ge4+ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained.
1. L.Bartoszek, E.Barnes, J.P.Miller et al., arXiv:1501.05241 (2015).
2. G.Pezzullo, J.Budagov, R.Carosi et al., J. Phys.:Conf. Ser., 587, 012 (2015).
3. G.Pezzulo, J.Budagov, R.Carosi et al., JINST, 9, C03018 (2014),
4. F.Ferroni, Nucl. Phys. B, Proc. Suppl., 23A, 100 (1991). http://dx.doi.org/10.1016/0920-5632(91)90036-E
5. V.Vaithianathana, S.Kumaragurubaran, N.Senguttuvan et al., J. Cryst. Growth, 235, 212 (2002). http://dx.doi.org/10.1016/S0022-0248(01)01725-0
6. Hua Jiang, H.J.Kim, Gul Rooh et al., in: IEEE NSS and MIC Conf. Rec.(2011), p.1580.
7. Yan Zhang, Jiayue Xu, Qingbo He, Baoliang Lu, J. Cryst. Growth, 362, 121 (2013). http://dx.doi.org/10.1016/j.jcrysgro.2011.12.088
8. Jiang Hua, Rooh Gul, H.J.Kim et al., IEEE Trans. Nucl. Sci., 61(1), 323 (2014). http://dx.doi.org/10.1109/TNS.2013.2283878
9. Rihua Mao, Liyuan Zhang, Ren-Yuan Zhu, IEEE Trans. Nucl. Science, 59, 2229 (2012). http://dx.doi.org/10.1109/TNS.2012.2192290
10. H.Prasad, S.C.Sabharwal, J. Cryst. Growth, 118, 396 (1992). http://dx.doi.org/10.1016/0022-0248(92)90088-Z
11. V.P.Zhereb, V.M.Skorikov, Inorg. Mater., 39, 1181 (2003). http://dx.doi.org/10.1023/A:1027305727015
12. C.W.Lan, H.J.Chen, C.B.Tsai, J. Cryst. Growth, 245, 56 (2002). http://dx.doi.org/10.1016/S0022-0248(02)01688-3
13. K.Takagi, T.Oi, T.Fukazawa, J. Cryst. Growth, 52, 584 (1981). http://dx.doi.org/10.1016/0022-0248(81)90345-6
14. A.Choubey, G.Bhagavannarayana, Yu.V.Shubin, Z. Kristallogr., 217, 515 (2002).
15. G.Bhagavannarayana, A.Choubey, Yu.V.Shubin, J. Appl. Crystallogr., 38, 448 (2005). http://dx.doi.org/10.1107/S002188980500590X
16. A.F.Lima, S.O.Souza, M.V.Lalic, J. Appl. Phys., 106, 013715 (2009). http://dx.doi.org/10.1063/1.3160291
17. Hua Jiang, Gul Rooh, H.J.Kim, J. Cryst. Growth, 367, 73 (2013). http://dx.doi.org/10.1016/j.jcrysgro.2012.12.145
18. D.Kurtsev, O.Sidletskiy, S.Neicheva et al., Mater. Res. Bul., 52, 25 (2014). http://dx.doi.org/10.1016/j.materresbull.2014.01.006
19. O.Sidletskiy, V.Kononets, K.Lebbou et al., Mater. Res. Bul., 47, 3249 (2012). http://dx.doi.org/10.1016/j.materresbull.2012.08.004
20. O.Sidletskiy, A.Gektin, A.Belsky, Phys. Status Solidi A, 211, 2384 (2014). http://dx.doi.org/10.1002/pssa.201431137