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Funct. Mater. 2017; 24 (2): 206-211.

doi:https://doi.org/10.15407/fm24.02.206

Luminescence of Dipole-centers in ZnSe crystals

M.Alizadeh1, V.Ya.Degoda1, B.V.Kozhushko2, N.Yu.Pavlova3

1T. Shevchenko National University of Kyiv, 64 Volodymyrs'ka Str., 01601 Kyiv, Ukraine
2Institute of Physics, National Academy of Sciences of Ukraine, 46 Nauky Ave., 03028 Kyiv, Ukraine
3National Pedagogical Dragomanov University, 9 Pyrogova Str., 01601 Kyiv, Ukraine

Abstract: 

It is proposed a model of recombination luminescence center on which the two opposite mechanisms of recombination, electron and hole recombination, are implemented. Such a center of luminescence is observed in ZnSe crystals and causes the luminescence of a wide band with the maximum at about 1.92 eV (630 nm). It is performed comparison of some characteristics of this center with the characteristics of the center of luminescence which is a point defect and provides the maximum at of 1.27 eV (970 nm). It is shown that the external electric field and temperature have different impacts on the intensity and spectral positions of the maxima of these bands.

Keywords: 
center of recombination, point defects and complex defects, X-ray luminescence, photoluminescence, electric field, zinc selenide.
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