Вы здесь

Funct. Mater. 2017; 24 (3): 372-375.

doi:https://doi.org/10.15407/fm24.03.372

Layered crystals FeIn2Se4, In4Se3 and heterojunctions on their basis

B.V.Kushnir, Z.D.Kovalyuk, V.M.Katerynchuk, V.V. Netyaga, I.G. Tkachuk

I.Frantsevich Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., Chernivtsi, 58001

Abstract: 

A new heterojunction (GP) p-FeIn2Se4-n-In4Se3 was formed by the mechanical contact of the FeIn2Se4 plate with the van der Waals surface of In4Se3. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed.The region of spectral photosensitivity of p-FeIn2Se4-n-In4Se3 GP which is in the range 0.7-1.3 eV, is established.

Keywords: 
layered crystals, heterojunction, spectral characteristics.
References: 

1. T.Torres, V. Sagredo, L.M.de Chalbaud, et al, Physica B: Phys. Cond. Matter., 384,100, 2006. https://doi.org/10.1016/j.physb.2006.05.162

2. I.V.Bodnar, I.A.Viktorov, S.A. Pavlyukovets, Inorg. Mat., 46, 6, 604, 2010.

3. H.Haeuseler, S.K.Srivastava, Zeitschrift fur Kristallographie, 215, 205, 2000.

4. I.V. Bodnar, S.A. Pavlyukovets, S. Trukhanov, et al, Semiconduct., 46, 606, 2012. https://doi.org/10.1134/S1063782612050077

5. N.N. Niftiev, M.A. Alidzhanov, O.B.Tagiev, M.B.Muradov, Semiconduct., 37, 165, 2003. https://doi.org/10.1134/1.1548658

6. V.P. Savchyn, Semiconduct., 15, 1430, 1981.

7. A.A.Balitskiy, Techn. Design Electron. Equipm. 2, 63, 2006.

8. V.M. Katerynchuk, Z.D. Kovalyuk, V.V. Netyaga, T.V. Betsa, Zh. Teor. Fiz. Pis'ma, 26, 6, 2000.

9. Z.D.Kovalyuk, Physical Basis of Semiconductor Material. Kiev, Naukova dumka - 1986, p.14.

10. N.Balakrishnan, Z. Kydrynskyi, M. Fay et al, Adv. Opt. Mater., 2, 1064, 2004. https://doi.org/10.1002/adom.201400202

11. A.U.Geim, I.V. Grigorieva , Nature., 499, 419 (2013). https://doi.org/10.1038/nature12385

12. A. Milnes, D. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic Press, New York, 1972.

13. S. Reil, H. Haeuseler, J. Alloys Comp. 270, 83, 1988. https://doi.org/10.1016/S0925-8388(98)00351-X

14. U. Schwarz, H. Hillebrecht, H. J. Deiseroth, R. Walther, Crystall. Mat., 210, 342, 2010.

15. S.M. Sze Physics of Semiconductor Devices, 2nd ed. New York: Wiley-Interscience, New York, 1981.

16. M.A.Lampert, P. Mark, Current Injection in Solids. Academic Press., New York, 1970, p.351.

Current number: