Funct. Mater. 2017; 24 (4): 649-653.

doi:https://doi.org/10.15407/fm24.04.649

Technological conditions effect on structural perfection of Cd1-xMnxTe crystals

V.Shafranyuk1, S.Dremlyuzhenko2, S.Solodin2, P.Fochuk2

1Bukovinian State Medical University, 2 Teatralna Sq., 58002 Chernivtsi, Ukraine
2Y.Fedkovych Chernivtsi National University, 2 Kotziubynskoho Str., 58012 Chernivtsi, Ukraine

Abstract: 

Dependence of Cd1-xMnxTe crystals' quality (0.02<x≤0.55) on synthesis duration and growing conditions, using the complementary X-ray diffraction methods, has been investigated. The obtained experimental results about the structural perfection and types of defects, their distribution and reasons of formation, allowed us to optimize the technological parameters of the perfect crystals' synthesis and growth.

Keywords: 
Cd1-xMnxTe solid solutions, X-ray topography, twins, crystal structure, Bridgman method.
References: 

1. L.Davydov, P.Fochuk, A.Zakharchenko et al., IEEE Trans. Nucl. Sci., 62, 1779 (2015). https://doi.org/10.1109/TNS.2015.2448939

2. A.Hossain, G.D.Gu, A.E.Bolotnikov et al., J. Nucl. Instr. Methods A, 781, 33 (2015). https://doi.org/10.1016/j.nima.2014.12.060

3. K.Kim, G.Jeng, P.Kim et al., J. Appl. Phys. 114, 063706 (2013). https://doi.org/10.1063/1.4817869

4. H. Guerrero, J.L.Escudero, E.Bernabeu, J. Appl. Phys., 74, 3459 (1993). https://doi.org/10.1063/1.354521

5. A.E.Turner, R.L.Gunshor, S.Datta, Appl. Optics, 22, 3152 (1983). https://doi.org/10.1364/AO.22.003152

6. J.Zhang, W.Jie, T.Wang et al., J. Cryst. Growth, 306, 33 (2007). https://doi.org/10.1016/j.jcrysgro.2007.03.044

7. J.Zhang, W.Jie, L.Wang, L.Luan, Cryst. Res. Technol, 45, 7 (2010). https://doi.org/10.1002/crat.200900623

8. K.H.Kim, A.E.Bolotnikov, G.S.Camarda et al., Mater. Res. Soc. Symp. Proc., 1341 (2011).

9. Y.Du, W.Jie, T.Wang et al., J. Cryst. Growth, 318, 1062 (2011). https://doi.org/10.1016/j.jcrysgro.2010.11.086

10. U.N.Roy, G.S.Camarda, Y.Cui et al., J. Cryst. Growth, 437, 53 (2016). https://doi.org/10.1016/j.jcrysgro.2015.12.017

11. M.Azoulay, A.Raizman, R.Weingarten, H. et al., J. Cryst. Growth, 128, 588 (1993). https://doi.org/10.1016/S0022-0248(07)80005-4

12. R.Triboulet, A.Heurtel, J.Rioux, J. Cryst. Growth, 101, 131 (1990). https://doi.org/10.1016/0022-0248(90)90951-G

13. S.B.Qardi, E.F.Skelton, A.W.Webb, Physica, 139 & 140 B, 341 (1986).

14. G.Babonas, R.R.Galazka, G.Pukinskas, A.Sileika, Phys. Stat. Sol. (b), 154, 389 (1989). https://doi.org/10.1002/pssb.2221540140

15. G.S.Camarda, N.M.Abdul-Jabbar, S.Babalola et al., Proc. SPIE, 6706, 670605 (2007). https://doi.org/10.1117/12.739604

16. S.Stoupin, Z.Liu, S.M.Heald, D.Brewe, M.Meron, J. Appl. Cryst., 48, 1734 (2015). https://doi.org/10.1107/S1600576715017446

17. Ye.S.Nikoniuk, Z.I.Zakharuk, A.I.Rarenko et al., J. Nano- and Electron. Phys., 7, 04054 (2015).

18. Z.I.Zakharuk, A.I.Rarenko, E.V.Rybak et al., Phys. Chem. Solid State, 8, 25 (2007).

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