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Funct. Mater. 2017; 24 (4): 654-659.

doi:https://doi.org/10.15407/fm24.04.654

Chemical polishing of InAs, InSb, GaAs and GaSb

I.V.Levchenko, V.M.Tomashyk, I.B.Stratiychuk, G.P.Malanych, A.S.Stanetska, A.A.Korchovyi

V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave., 03028 Kyiv, Ukraine

Abstract: 

The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH4)2Cr2O7-HBr-C4H6O6 etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH4)2Cr2O7-HBr-C4H6O6 etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.

Keywords: 
semiconductor, tartaric acid, chemical-dynamic polishing, etchant, etching rate.
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