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Funct. Mater. 2018; 25 (1): 165-171.

doi:https://doi.org/10.15407/fm25.01.165

Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH4)2Cr2O7-HBr-citric acid etching composition

I.V.Levchenko, V.M.Tomashyk, I.B.Stratiychuk, G.P.Malanych, A.S.Stanetska, A.A.Korchovyi

V.Ye.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave., 03028 Kyiv, Ukraine

Abstract: 

The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH4)2Cr2O7-HBr-C6H8O7 etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolution process, regions of the polishing and unpolishing solutions have been established. The polishing etchant compositions and conditions for chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been proposed and optimized.

Keywords: 
gallium arsenide, indium arsenide, gallium antmonide, indium antimonide, chemical-dynamic polishing.
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