Вы здесь

Funct. Mater. 2018; 25 (2): 364-370.

doi:https://doi.org/10.15407/fm25.02.364

Application of slag refining technique to metallurgical grade silicon purification process: A review

Rowaid Al-khazraji1,2, Yaqiong Li, Lifeng Zhang1,2

1 School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China
2 Beijing Key Laboratory of Green Recycling and Extraction of Metal, University of Science & Technology Beijing, Beijing 100083

Abstract: 

The photovoltaic generates electricity through direct conversion of sunlight, has fast-growing recently due to high global energy demand. Photovoltaic main material is silicon which needs refining process to fulfill the requirements. In this paper, the principle of silicon-slag refining was introduced and several types of imposing slag were reviewed. Boron removal from silicon using Si-based alloy and novel slag with active component were mentioned, and effects of slag refining processing parameters were discussed. According to the investigations, slag refining technique can remove a large amount of boron from MG-Si, and the potential industrial applications of slag refining technique were proposed.

Keywords: 
solar grade silicon, metallurgical grade silicon, slag refining, B removal.
References: 

1. C.Xu, C.Pan, Y.Liu, Z. L.Wang, Nano Energy, 1, 259 (2012).

2. M. Martorano, J. F. Neto, T. Oliveira, T. Tsubaki, Mater. Scie. Eng.: B, 176, 217 (2011).

3. S. Sun, Y. Tan, W. Dong, H. Zhang, J. Zhang, J. Mater. Eng. Perform., 21, 854 (2012).

4. I. Santos et al., Hydrometall., 23, 237 (1990).

5. V. Lashgari, H. Yoozbashizadeh, ASM Scie.J., 1, 37 (2007).

6. Z. Yin, A. Oliazadeh, S. Esfahani, M. Johnston, M. Barati, Canadian Metall. Quart., 50, 166 (2011).

7. S. Esfahani, M. Barati, Met. Mater. Int., 17, 1009 (2011).

8. K. Hanazawa, N. Yuge, Y. Kato, Mater. Trans., 45, 844 (2004).

9. K. Hanazawa, N. Yuge, S. Hiwasa, Y. Kato, J.Japan Inst.Metal., 67, 569 (2003).

10. M. Johnston, M. Barati, Sol. Energy Mater.Sol. Cells, 94, 2085 (2010).

11. M. D. Johnston, L. T. Khajavi, M. Li, S. Sokhanvaran, M. Barati, JOM, 64, 935 (2012).

12. A. M. Mitrinov, T. A. Utigard, Silicon, 1, 239 (2009).

13. B.R.Bathey, M.C.Cretella, J. Mater. Sci., 17, 3077 (1982).

14. J.J.Wu, Y.Bin, Y.DAI, K.Morita, Trans.Nonferr Met. Soc. China, 19, 463 (2009).

15. E. T. Turkdogan, (1980).

16. L. A. V.Teixeira, K.Morita, ISIJ Int., 49, 783 (2009).

17. J.Wu, Y.Li, K.Wei, Y.Bin, Y.Dai, Trans.Nonferr Met. Soc. China, 24, 1231 (2014).

18. K.X.Wei et al., Rare Metals, 34, 522 (2015).

19. J.Safarian, G.Tranell, M.Tangstad, Metall. Mater. Trans. B, 44, 571 (2013).

20. M.Fang et al., Ind.Eng. Chem. Res., 53, 12054 (2014).

21. D.Luo, L.Ning, Y.Lu, G.Zhang, T.Li, Transactions of Nonferrous Metals Society of China, 21, 1178 (2011).

22. C.Jing, J.Li, W.Chen, C.Chao, X.Luo, Trans.Nonferr Met. Soc. China, 21, 1402 (2011).

23. J.Wu, F.Wang, W.Ma, Y.Lei, B.Yang, Metall. Mater. Trans. B, 47, 1796 (2016).

24. Y.Li, J.Wu, W.Ma, B.Yang, Silicon, 7, 247 (2015).

25. J. Wu et al., J.Non-Crystal. Sol., 358, 3079 (2012).

26. Z.Ding et al., J.Non-Crystall.e Solids, 358, 2708 (2012).

27. H.Lai et al., JOM, 1 (2015).

28. H. Nishimoto, K. Morita, Supplemental Proceedings: Materials Processing and Energy Materials, 1, 701 (2011).

29. Y.Wang, X.Ma, K.Morita, Metall.Mater. Trans. B, 45, 334 (2014).

30. C. Lu et al., Sep. Scie..Technol., 50, 2759 (2015).

31. C. Lu, T. Tang, Z. Sheng, P. Xing, X. Luo, Vacuum, 143, 7 (2017).

32. J. Wu, Y. Zhou, W. Ma, M. Xu, B. Yang, Metall.Mater. Trans. B, 48, 22 (2017).

33. S.L.Yuan, H.M.Lu, P.P.Wang, C.G.Tian, Z.J.Gao, Rare Metals, 1 (2014).

34. L.Huang et al., Separ. Purif. Techn., 170, 408 (2016).

35. X.Ma, T.Yoshikawa, K.Morita, Sep. Scie..Technol., 125, 264 (2014).

36. X.Ma, T.Yoshikawa, K.Morita, Metall.Mater. Trans. B, 44, 528 (2013).

37. M.Li, T.Utigard, M.Barati, Metall.Mater. Trans.B, 45, 221 (2014).

38. J. Wu et al., Mater. Scie. Semicond. Proc., 57, 59 (2017).

39. J.-L. Sun et al., Trans.Nonferr. Met. Soc. China, 26, 3299 (2016).

Current number: