Funct. Mater. 2018; 25 (3): 486-489.


Current transport through ohmic contacts to indiume nitride with high defect density

P.O.Sai1, N.V.Safriuk1, V.V.Shynkarenko1, P.N.Brunkov2,3, V.N.Jmerik2, S.V.Ivanov2

1V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03680, Keiv, Ukraine
2A.Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Peterburg, Russia
3National Research University of Information Technologies, Mechanics and Optics (ITMO), 197101 St.Petersburg, Russia


The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ1018 and 8.3ċ1018 cm-3) over the wide temperature range (4.2 - 380 K). The growing curves are obtained in the entire investigated temperature range for both doping level. They are explained within the mechanism of thermionic current flow through metal shunts associated with the so-called conducting dislocations. Good agreement between the theoretical and experimental dependences is obtained assuming that the flowing current is limited by total resistance of metal shunts. Moreover the effect of temperature dependence of metal resistivity on total contact resistivity was observed. The density of conducting dislocations obtained from the theory is coherent with the density of screw and edge dislocations obtained from X-ray diffraction investigation of the structure.

ohmic contact; indium nitride, contact resistivity, current flow mechanism, rapid thermal annealing.

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