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Funct. Mater. 2019; 26 (2): 302-309.


Optical properties of thin copper sulphide films obtained by thermal evaporation

T.V.Semikina1,2, S.V.Mamykin1, L.N.Shmyreva2

1V.Lashkaryov Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 41 Nauky Ave., 03028 Kyiv, Ukraine
2I.Sikorsky National Technical University of Ukraine KPI, 33 Prospect Peremogy, 03056 Kyiv, Ukraine


Thin copper sulphide films were grown on glass substrates by explosive thermal evaporation method. X-ray diffraction measurements show amorphous structure of the films. The thicknesses of grown films (13 - 84 nm), energy of optical direct (2.25 eV - 2.74 eV) and indirect (0.55 eV - 1.60 eV) transitions were obtained using Tauc plot from the measurements of optical transmission and reflection spectra. The dependences of optical band gap Eg on the film thickness, copper content and ambient temperature during deposition have been studied. The observed nonmonotonic dependences of Eg are analyzed from the point of view of influence of the Burstein-Moss effect and the structural rearrangement of growing films. The influences of the ambient temperature, copper to sulfur ratio on the structural and optical properties are analyzed.

thin films of copper sulphide, transmission spectra, energy of direct and indirect transitions.

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