Funct. Mater. 2019; 26 (2): 353-357.
Improvement of technology for the production of a semiconductor cathode of oxide-semiconductor capacitors
Kharkiv National University of Radio Electronics, 14 Science Ave., 61166 Kharkiv, Ukraine
Based on the Auger electron spectroscopy data on the chemical composition of the Nb-Nb2O5-MnO2 system doped with indium oxide compounds, the ligature distributions across the thickness of MnO2, Nb2O5 layers and also at the interface were determined. It was established that indium was present in both layers, but its maximum content was found at the MnO2/Nb2O5 interface. To clarify the reasons for the decrease in leakage currents (Ilc) in the studied system doped with indium oxide, polarization studies of electrodes of pure niobium pentoxide and ones made from Nb2O5 containing indium inclusions were carried out. The results of the current-voltage measurements in the V(Y)-V(IY) oxidation-reduction system showed that in the presence of indium, the cathodic current decreases in proportion to the decrease in the leakage current. It was established that in the pyrolysis near the MnO2/Nb2O5 interface in the absence of indium, a transition zone with a variable composition of manganese and niobium oxides appeared. Violation of the stoichiometric composition in MnO2 and Nb2O5 layers adjacent to the interface was detected.
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