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Funct. Mater. 2019; 26 (3): 462-465.

doi:https://doi.org/10.15407/fm26.03.462

Transverse conductivity and pseudogap in single crystals YBa2Cu3O7-δ irradiated by high-energy electrons

Yu.V.Litvinov1, G.Ya.Khadzhai1, A.V.Samoilov2, R.V.Vovk1,2, N.R.Vovk1, V.V.Sklar1

1V.Karazin Kharkiv National University, 4 Svobody Sq., 61022 Kharkiv, Ukraine
2Ukrainian State University of Railway Transport, 7 Feierbakh Sq., 61050 Kharkiv, Ukraine

Abstract: 

The temperature dependences of the electrical resistivity along the c-axis of YBa2Cu3O7-δ single crystals before and after irradiation with various doses (from 1.4 ·1018 cm-2 to 8.8·1018 cm-2) of high-energy electrons at T ≤ 10 K (energy 0.5-2.5 MeV) were investigated. It was found that in the case of the YBa2Cu3O7-δ, as the radiation dose increases, the carrier localization processes increase, which is accompanied by a transition from the PG mode to the hopping conductivity mode with a variable long jump.

Keywords: 
HTSC, pseudogap, incoherent electrotransport, YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-&delta;</sub> single crystals, irradiation, carrier localization.
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