Funct. Mater. 2020; 27 (1): 29-34.

doi:https://doi.org/10.15407/fm27.01.29

Influence of current density of anodizing on the geometric characteristics of nanostructures synthesized on the surface of semiconductors of A3B5 group and silicon

Ya.O.Sychikova, I.T.Bogdanov, S.S.Kovachov

Berdyansk State Pedagogical University, 4 Schmidt Str., 71100 Berdyansk, Ukraine

Abstract: 

The correlation between the current density of anodizing semiconductors and the morphological characteristics of the formed nanostructures is investigated. The studies were carried out for semiconductors of the A3B5 group (InP, GaP, GaAs) and Si. Porous nanostructured layers were obtained by electrochemical etching in a solution of hydrofluoric acid at various current densities. As a result of the study, it was found that the current density affects the pore diameter, surface and bulk porosity and the thickness of the porous layer. The critical points of current density characterizing the beginning and end of active pore formation on the surface of semiconductors are determined.

Keywords: 
electrochemical etching, current density, nanostructures, porous semiconductors, pore diameter, porosity, thickness of porous layer.

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