Funct. Mater. 2020; 27 (1): 67-74.

doi:https://doi.org/10.15407/fm27.01.67

Transport properties of the bismuth telluride thin films with different stoichiometry in the temperature range 77-300 K

E.I.Rogacheva, K.V.Novak, A.N.Doroshenko, O.N.Nashchekina, A.V.Budnik

National Technical University "Kharkiv Polytechnic Institute", 2 Kyrpychova Str., 61002 Kharkiv, Ukraine

Abstract:

The objects of the present study are thin films with thicknesses d = 45-620 nm prepared by thermal evaporation in vacuum from a single source, using undoped p- and n-type Bi₂Te₃ polycrystals with different stoichiometry (60.0 and 62.8 at. % Te, respectively) as a charge, and subsequent condensation on glass substrates at 500 K. The temperature dependences of the Hall coefficient R_H, electrical conductivity σ, and Hall charge carrier mobility μ_H of thin films were obtained in the range 77-300 K. It was found that the films had the same type of conductivity as the initial polycrystals in the entire temperature range studied and, like in the initial crystals, σ and μ_H decreased with increasing temperature. The exponents ν in the μ_H(T) dependences for the bulk polycrystals were larger than those for the films and increased with increasing d. In contrast to the p-type bulk polycrystals, R_H of the p-type films decreased under increasing temperature. In the n-type Bi₂Te₃, R_H decreased with temperature for both thin films and bulk crystals, however, the character of the R_H(T) dependences for the crystals and films differed. The decrease in R_H with temperature before the range of intrinsic conductivity in all thin films is attributed to the existence of donor and acceptor defect states.

Keywords:

bismuth telluride, thin film, stoichiometry, electrical conductivity, Hall coefficient, charge carrier mobility.

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Funct. Mater. 2020; 27 (1): 67-74.

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