Funct. Mater. 2020; 27 (3): 488-496.
Galvanomagnetic properties of polycrystalline Bi1-xSbx solid solutions in the concentration range x = 0-0.25
National Technical University "Kharkiv Polytechnic Institute", 2 Kyrpychova Str., 61002 Kharkiv, Ukraine
The dependences of the Hall coefficient, electrical conductivity, magnetoresistance, electron and hole concentration and mobility on the Bi1-xSbx solid solution composition in the concentration range x = 0-0.25 at 77 and 300 K in magnetic fields 1 T and 0.05 T were obtained. It was shown that all the dependences exhibit a distinct nonmonotonic oscillating behavior at both temperatures and in both magnetic fields. The presence of concentration-dependent anomalies of galvanomagnetic properties is attributed to critical phenomena accompanying the percolation-type transition from dilute to concentrated solid solutions and electronic phase transitions: a transition to a gapless state, the semimetal - semiconductor transition, and indirect - direct band gap semiconductor transition.
1. Materials, Preparation, and Characterization in Thermoelectrics, ed. by D.M.Rowe, CRC Press, Boca Raton: Taylor & Francis Group (2012).
2. Materials Aspect of Thermoelectricity, ed. by C.Uher, CRC Press, Boca Raton (2016).
3. M.Z.Hasan, C.L.Kane, Rev. Mod. Phys., 82, 3045 (2010).
https://doi.org/10.1103/RevModPhys.82.3045
4. L.Fu, C.L.Kane, E.J.Mele, Phys. Rev. Lett., 98, 106803 (2007).
https://doi.org/10.1103/PhysRevLett.98.106803
5. D.Hsieh, D.Qian, L.Wray et al., Nature, 452, 970 (2008).
https://doi.org/10.1038/nature06843
6. P.Ghaemi, R.S.K.Mong, J.Moore, Phys. Rev. Lett., 105, 166603 (2010).
https://doi.org/10.1103/PhysRevLett.105.166603
7. Ya.A.Ugay, Ye.G.Goncharov, G.V.Semenova, V.B.Lazarev, Phase Equilibria between Phosphorus, Arsenic and Bismuth, Nauka, Moscow (1989) [in Russian].
8. N.B.Brandt, R.Hermann, G.I.Golysheva et al., Sov. Phys. JEPT, 56, 1247 (1982).
9. N.V.Brandt, Chudinov S.M. V.G.Karavaev, Zh. Eksper. Teor. Fiziki, 70,2296 (1976) .
10. B.Lenoir, H.Scherrer, T.Caillat, Semiconductors and Semimetals: Recent Trends in Thermoelectric Materials Research I, ed. by T.M.Tritt, v.69, Acad. Press San Diego (2001), p.101.
https://doi.org/10.1016/S0080-8784(01)80150-2
11. B.Lenoir, A.Dauscher, M.Cassart et al., J. Phys. Chem. Solids, 59. 129 (1998).
https://doi.org/10.1016/S0022-3697(97)00187-X
12. L.A.Kirakozova, A.Krapf, W.Kraak et al., Phys. Stat. Sol. (b), 169, 417 (1992).
https://doi.org/10.1002/pssb.2221690215
13. B.A.Tairov, X.A.Gasanova, R.I.Selim-zade., Semiconductors, 50, 996 (2016).
https://doi.org/10.1134/S1063782616080248
14. Z.J.Yue, X.L.Wang, S.S.Yan, Appl. Phys. Lett., 107, 112101 (2015).
https://doi.org/10.1063/1.4930882
15. V.M.Grabov, G.A.Ivanov, V.L.Naliorov, A.F.Panarin, Seminar of Semiconductor Materials for Thermoelectric Conversion, Leningrad (1985), p.35.
16. G.A. Ivanov and A.M., Popov, Fizika i Tehnika Poluprov., 5, 2409 (1963) (in Russian).
17. W.M.Yim, A.Asmith, Solid State Electronics, 15, 1141 (1972).
https://doi.org/10.1016/0038-1101(72)90173-6
18. G.A. Ivanov, G.N. Kolpachnikov, V.L. Naletov, T.Ya. Yakovleva, Polumetally: Uchenye Zapiski LGPI., 384, 39 (1968).
19. V.L. Naletov, G.A. Ivanov, T.Ya. Yakovleva, V.I. Nikolaev, Izv. AN SSSR, Neorgan. Mater., 7, 1321 (1971).
20. A.L.Jain, Phys. Rev., 114, 1518 (1959).
https://doi.org/10.1103/PhysRev.114.1518
21. T.Yasaki, Y.Abe, J. Phys. Soc. Jpn., 24, 290 (1968).
https://doi.org/10.1143/JPSJ.24.290
22. V.A. Alekseeva, N.F. Zaets, Ђ.Ђ. Kudryashov, Fizika i Technika Poluprov, 12, 2052 (1978).
23. N.Wagner, O.Brummer, H.R.Prietzsch, Kristall und Technik, 9, 1153 (1974).
https://doi.org/10.1002/crat.19740091010
24. S.D.Probert, C.B.Thomas, Applied Energy, 5, 127 (1979).
https://doi.org/10.1016/0306-2619(79)90013-8
25. S.Tanuma, J. Phys. Soc. Jpn., 16, 2349 (1961).
https://doi.org/10.1143/JPSJ.16.2349
26. 26. G.A. Ivanov, A.M., Popov, B.I Chityakov, Fizika. Metallov i Metallovedenie, 16 , 184 (1963).
27. V.M.Grabov, O.N.Uryupin, V.A.Komarov, Proc. 17th. Int. Conf. Thermoelectrics, Nagoya, Japan (1998), p.78.
28. T.K.Dey, S.K.Ghatak, J. Phys., 32, 161 (1989).
https://doi.org/10.1007/BF02847020
29. H.Kitagawa, H.Noguchi, M.Itoh, Y.Noda, Proc. 22nd Int. Conf. Thermoelectrics (2003), p.290.
30. H.Kitagawa, H.Noguchi, T.Kiyabu et al., J. Phys. Chem. Solids, 65, 1223 (2004).
https://doi.org/10.1016/j.jpcs.2004.01.010
31. K.Malik, D.Das, D.Mondal et al., J. Appl. Phys., 112, 083706 (2012).
https://doi.org/10.1063/1.4759137
32. S.Dutta, V.Shubha, T.G.Ramesh, F.D'Sa, J. Alloy Compd., 467. 305 (2009).
https://doi.org/10.1016/j.jallcom.2007.11.146
33. S.Dutta, V.Shubha, T.G.Ramesh, Physica B, 405, 1239 (2010).
https://doi.org/10.1016/j.physb.2009.11.051
34. G.A.Ivanov ,.‹., V.L.Naletov, I.I.Fadeeva, '.Ђ.Yakovleva, Polumetally: Uchenye Zapiski LGPI, 384, 21 (1968).
35. S.Tanuma, J. Phys. Soc. Jpn., 14, 1246 (1959).
https://doi.org/10.1143/JPSJ.14.1246
36. S.Tanuma, J. Phys. Soc. Jpn., 16, 2354 (1961).
https://doi.org/10.1143/JPSJ.16.2354
37. X.Devaux, F.Brochin, A.Dauscher et al., Proc. 16th Int. Conf. Thermoelectrics (1997), p.199.
38. X.Devaux, F.Brochin, R.Martin-Lopez, H.Scherrer, J. Phys. Chem. Solids, 62, 119 (2002).
https://doi.org/10.1016/S0022-3697(01)00087-7
39. R.Martin-Lopez, A.Dauscher, H.Scherrer et al., Appl. Phys. A, 68, 597 (1999).
https://doi.org/10.1007/s003390050947
40. G.Cochrane, W.V.Youdelis, Metal. Trans., 3, 2843 (1972).
https://doi.org/10.1007/BF02652851
41. D.Cadavid, J.E.Rodrigues, Phys. Stat. Sol. (c), 2, 3677 (2005).
https://doi.org/10.1002/pssc.200461721
42. H.J.Liu, L.F.Li, AIP Conf. Proc., v.824 (2006), p.43.
43. H.J.Liu, Y.L.Wu, R.J.Huang et al., J. Phys. Chem. Solids, 67, 1492 (2006).
https://doi.org/10.1016/j.jpcs.2006.02.003
44. H.J.Liu, Ch.M.Song, S.T.Wu, L.F.Li, Cryogenics, 47, 56 (2007).
https://doi.org/10.1016/j.cryogenics.2006.09.007
45. E.I.Rogacheva, A.A.Drozdova, M.S.Dresselhaus, Proc. 25th Int. Conf. Thermoelectrics, 107 (2006).
46. E.I.Rogacheva, A.A.Drozdova, J. Thermoelectricity, 2. 22 (2006).
47. E.I.Rogacheva, A.A.Yakovleva (Drozdova A.A.), V.I.Pinegin, M.S.Dresselhaus, J. Phys. Chem. Solids, 69, 580 (2008).
https://doi.org/10.1016/j.jpcs.2007.07.042
48. E.I.Rogacheva, A.A.Drozdova, O.N.Nashchekina et al., Appl. Phys. Lett., 94, 202111 (2009).
https://doi.org/10.1063/1.3139076
49. A.A.Drozdova, E.I.Rogacheva, M.V.Dobrotvorskaya, P.V.Mateichenko, J. Thermoelectricity, 2. 76 (2009).
50. E.I.Rogacheva, A.A.Drozdova, O.N.Nashchekina et al., Phys. Stat. Sol. (a), 207, 344 (2010).
https://doi.org/10.1002/pssa.200925144
51. E.I.Rogacheva, A.A.Drozdova, O.N.Nashchekina, Yu.V.Men'shov, J. Electron. Mater., 42, 2098 (2013).
https://doi.org/10.1007/s11664-013-2534-y
52. E.I.Rogacheva, A.N.Doroshenko, V.I.Pinegin, M.S.Dresselhaus, J. Thermoelectricity, 6, 13 (2013).
53. E.I.Rogacheva, A.N.Doroshenko, O.N.Nashchekina, M.S.Dresselhaus, Appl. Phys. Lett., 109, 131906 (2016).
https://doi.org/10.1063/1.4963880
54. A.N.Doroshenko, E.I.Rogacheva, A.A.Drozdova et al., J. Thermoelectricity, 4, 23 (2016).
55. E.I.Rogacheva, A.A.Drozdova, I.I.Izhnin, M.S.Dresselhaus, Phys. Status Solidi (A), 206, 298 (2009).
https://doi.org/10.1002/pssa.200824430
56. E.I.Rogacheva, A.N.Doroshenko, O.N.Nashchekina, Materials Today Proceedings (in press, accepted).
57. E.V.Kuchis, Galvanomagnetic Effects and the Methods of their Measurement, Radio and communication, Moscow (1990) [in Russian].
58. V.L.Bonch-Bruevich, S.G.Kalashnikov, Semiconductor Physics, Nauka, Moscow (1990) [in Russian].
59. G.A.Mironova, M.V.Sydakova, Ya.G.Ponomarev, Fizika Tverd. Tela, 22, 3628 (1980).
60. Yu.I.Ravich, Rapoport, Fizika Tverdogo Tela, 34, 960 (1992).
61. E.I.Rogacheva, J. Phys. Chem. Solids, 64, 1579 (2003).
https://doi.org/10.1016/S0022-3697(03)00245-2
62. I.M.Tsidilkovskiy, Gapless Semiconductors are New Class of Materials, Nauka, Moscow (1986) [in Russian].
63. B.I.Shklovskii, A.L.Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, New York (1984).
https://doi.org/10.1007/978-3-662-02403-4
64. D.Stauffer, A.Aharony, Introduction to Percolation Theory, Taylor & Francis, London-Washington, DC (1992).