Funct. Mater. 2020; 27 4: 652-658.
Transverse conductivity of Y1-yPryBa2Cu3O7-δ single crystals in a wide range of praseodymium concentrations
1V.N.Karazin Kharkiv National University, 4 Svobody Sq., 61022 Kharkiv, Ukraine
2Centre of Low Temperature Physics, Faculty of Science, P.J.Safarik University, 9 Park Angelinum, 04154 Kosice, Slovakia
The temperature dependences of the transverse resistance of Y1-yPryBa2Cu3O7-δ - single crystals are measured at high concentrations of praseodymium, where semiconducting behaviour prevails. The approximation of the transverse electrical resistivity of Y1-yPryBa2Cu3O7-δ - single crystals is performed using a relation describing the total hopping and fluctuation conductivity with an accuracy of no worse than 3 %. The obtained dependences of the approximation parameters on the praseodymium content give grounds to assume that in the concentration range 0.34 < y < 0.43, the sample breaks down into separate conducting regions.
1. T.Timusk, B.Statt, Rep. Prog. Phys., 62, 161 (1999). https://doi.org/10.1088/0034-4885/62/1/002 |
||||
2. R.V.Vovk, A.L.Solovyov, Low Temp. Phys., 44, 81 (2018). https://doi.org/10.1063/1.5020905 |
||||
3. M.A.Obolenskij, A.V.Bondarenko, R.V.Vovk et al., Low Temp. Phys., 23, 882 (1997). https://doi.org/10.1063/1.593496 |
||||
4. A.L.Solovjov, E.V.Petrenko, L.V.Omelchenko et al., Scientific Reports, 9, 9274 (2019). https://doi.org/10.1038/s41598-019-45286-w |
||||
5. S.I.Bondarenko et al., Low Temp. Phys., 43, 1125 (2017). https://doi.org/10.1063/1.5008405 |
||||
6. G.Blatter et al., Rev. Mod. Phys., 66, 1125 (1994) https://doi.org/10.1103/RevModPhys.66.1125 |
||||
7. A.L.Solovjov, L.V.Omelchenko, E.V.Petrenko et al., Scientific Reports, 9, 20424 (2019). https://doi.org/10.1038/s41598-019-55959-1 |
||||
8. J.Ashkenazi, J. Supercond. Nov. Magn., 24, 1281 (2011). https://doi.org/10.1007/s10948-010-0823-8 |
||||
9. R.V.Vovk, M.A.Obolenskii, A.A.Zavgorodniy et al., J. Alloys Compd., 485, 121 (2009). | ||||
10. J.D.Jorgencen, P.Shiyou, P.Lightfoot et al., Physica C, 167, 571 (1990). https://doi.org/10.1016/0921-4534(90)90676-6 |
||||
11. A.L.Solovjov, L.V.Omelchenko, R.V.Vovk et al., Physica B, 493, 58 (2016). https://doi.org/10.1016/j.physb.2016.04.015 |
||||
12. R.V.Vovk, M.A.Obolenskii et al., J. Mater. Sci.:Mat. in Electron., 18, 811 (2007). https://doi.org/10.1007/s10854-006-9086-3 |
||||
13. H.A.Borges, M.A.Continentino, Solid State Commun., 80, 197 (1991). https://doi.org/10.1016/0038-1098(91)90180-4 |
||||
14. R.V.Vovk, M.A.Obolenskiy, A.A.Zavgorodniy et al., Physica B, 404, 3516 (2009). https://doi.org/10.1016/j.physb.2009.05.047 |
||||
15. K.Widder, A.Zibold, M.Merz et al., Physica C, 232, 82 (1994). https://doi.org/10.1016/0921-4534(94)90296-8 |
||||
16. R.V.Vovk, N.R.Vovk, G.Ya.Khadzhai et al., Solid State Commun., 190, 18 (2014). https://doi.org/10.1016/j.ssc.2014.04.004 |
||||
17. M.K.Chu, J.R.Ashburn, C.J.Torng et al., Phys. Rev. Lett., 58, 908 (1987). https://doi.org/10.1103/PhysRevLett.58.908 |
||||
18. R.V.Vovk, N.R.Vovk, G.Ya.Khadzhai et al., Physica B, 422, 33 (2013). https://doi.org/10.1016/j.physb.2013.04.032 |
||||
19. A.A.Abrikosov, UFN, 168, 683 (1998). https://doi.org/10.3367/UFNr.0168.199806i.0683 |
||||
20. G.Ya.Khadzhai, R.V.Vovk, O.V.Dobrovolskiy, Physica B: Condensed Matter, 566, 121 (2019). https://doi.org/10.1016/j.physb.2019.05.004 |
||||
21. G.Ya.Khadzhai, R.V.Vovk, I.L.Goulatis et al., J. Mater. Sci.:Mater. Electron., 31, 7708 (2020). https://doi.org/10.1007/s10854-020-03306-w |
||||
22. An Original Source, ed. by D.M.Ginsberg, Physical Properties of High-Temperature Superconductors I., Word Scientific, Singapore (1989). | ||||
23. M.Akhavan, Physica B, 321, 265 (2002). https://doi.org/10.1016/S0921-4526(02)00860-8 |
||||
24. L.Soderholm, K.Zhang, D.G.Hinks et al., Nature, 328, 604 (1987). https://doi.org/10.1038/328604a0 |
||||
25. A.Kebede, C.S.Jee, J.Schwegler et al., Phys. Rev. B, 40, 4453 (1989). https://doi.org/10.1103/PhysRevB.40.4453 |
||||
26. J.Fink, N.Nucker, H.Romberg et al., Phys. Rev. B, 42, 4823(R) (1990). https://doi.org/10.1103/PhysRevB.42.4823 |
||||
27. M.R.Scheinfein, J.Unguris, D.T.Pierce et al., J. Appl. Phys., 67, 5932 (1990). https://doi.org/10.1063/1.346018 |
||||
28. C.Infante, M.K.El Mously, R.Dayal et al., Physica C, 167, 640 (1990). https://doi.org/10.1016/0921-4534(90)90683-6 |
||||
29. A.I.Liechtenstein, I.I.Mazin, Phys. Rev. Lett. 74, 1000 (1995). https://doi.org/10.1103/PhysRevLett.74.2303 |
||||
30. M.Muroj, R.Street, Physica C, 228, 216 (1994). https://doi.org/10.1016/0921-4534(94)90412-X |
||||
31. R.P.S.M.Lobo, E.Ya.Sherman, D.Racah et al., Phys. Rev. B, 65, 104509 (2002). https://doi.org/10.1103/PhysRevB.65.104509 |
||||
32. H.B.Radousky, J. Mater. Res., 7, 1917 (1992). https://doi.org/10.1557/JMR.1992.1917 |
||||
33. R.V.Vovk, G.Ya.Khadzhai, O.V.Dobrovolskiy, Appl. Phys. A, 117, 997 (2014). https://doi.org/10.1007/s00339-014-8670-2 |
||||
34. G.Ya.Khadzhai, N.R.Vovk, R.V.Vovk, Low Temp. Phys., 40, 488 (2014). https://doi.org/10.1063/1.4881197 |
||||
35. R.V.Vovk, N.R.Vovk, O.V.Shekhovtsov et al., Supercond. Sci. Technol., 26, 085017 (2013). https://doi.org/10.1088/0953-2048/26/8/085017 |
||||
36. An Original Source, N.F.Mott, Metal-Insulator Transition, World Scientific, London (1974). | ||||
37. M.Z.Meilikhov, JETF, 115, 4, 1484 (1999). https://doi.org/10.1016/S0012-3692(15)35331-9 |
||||
38. Ping Sheng, J.Klafter, Phys. Rev. B, 27, 2583 (1983). https://doi.org/10.1103/PhysRevB.27.2583 |
||||
39. M.A.Ivanov, V.M.Loktev, FNT, 25, 1325 (1999). https://doi.org/10.1063/1.593854 |
||||
40. H.C.Montgomery, J. Appl. Phys., 42, 2971 (1971). https://doi.org/10.1063/1.1660656 |
||||
41. L.G.Aslamazov, A.L.Larkin, Phys. Lett., 26A, 238 (1968). | ||||
42. B.Leridon, A.Defossez, J.Dumont et al., Phys. Rev. Lett., 87, 197007-1 (2001). https://doi.org/10.1103/PhysRevLett.87.197007 |
||||
43. G.D.Chryssikos, E.I.Kamitsos, J.A.Kapoutsis et al., Physica C, 254, 44 (1995). https://doi.org/10.1016/0921-4534(95)00553-6 |
||||
44. R.V.Vovk, M.A.Obolenskii, Z.F.Nazyrov et al., J. Mater. Sci.: Mater Electron., 23, 1255 (2012). https://doi.org/10.1007/s10854-011-0582-8 |
||||
45. An Original Source, R.Smith, Semiconductors, Cambridge university press (1978). |