Funct. Mater. 2022; 29 (2): 202-208.
Obtaining semiconductor structures Si-Si1-xGex-Si1-x-yGexSny from the liquid phase in a single technological cycle
1Urgench State University, Urgench, 14 Kh.Alimdzhan Str., Urgench, Uzbekistan
2Physicotechnical Institute NPO Physics-Sun, Academy of Sciences of the Republic of Uzbekistan, 2B Ch.Aitmatov Str., Tashkent, Uzbekistan
3V.N.Karazin Kharkiv National University, 4 Svobody Sq., 61002 Kharkiv, Ukraine
By the method of liquid-phase epitaxy in a single technological cycle,semiconductor Si-Si1-xGex-Si1-x-yGexSny structures were obtained from a confined tin solution-melt on Si <111> substrates in the temperature range 1100°C-500°C. Some electro-physical and photoelectric parameters of the grown Si1-x-yGexSny films were also studied. The microstructural, electrophysical, and photoelectric properties of Si1-x-yGexSny films have been investigated,and it was shown that the samples obtained by liquid-phase epitaxy have unique technological characteristics.
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