Funct. Mater. 2023; 30 (2): 156-162.
Morphological investigations of solid solutions (GaAs)1-x(ZnSe)x doped with < Sb >
Urgench State University, 14 Kh. Alimdjan, Urgench, Uzbekistan
The possibility of growing (GaAs)1-x(ZnSe)x solid solutions doped with antimony at the onset of crystallization at a temperature TOC = 750°C on a GaAs(100) and GaAs(111) substrates is shown. The method of liquid-phase epitaxy from a limited solution-melt of tin in the cooling rate range of 0.5-3 deg/min was used. The chemical composition, the perfection of the substrate-film boundary, and the surface of the epitaxial layers of (GaAs)1-x(ZnSe)x < Sb > solid solutions were studied using a scanning electron microscope (SEM); the surface roughness of the films was studied using an atomic force microscope (AFM). It is shown that doping of the solid solution with Sb reduces the dislocation density on the film surface to Nd = 7 ·103 cm-2, and on the substrate-film interface - to Nd = 2·104 cm-2. X-ray diffraction studies have shown that the resulting films are single-crystal and have a sphalerite structure. Some electrophysical and photoelectric properties of the samples have been studied.
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