Funct. Mater. 2025; 32 (4): 650-656.

doi:https://doi.org/10.15407/fm32.04.650

Modified top-seeding solution growing of KTaO3

G.Yu. Rudko, T.V. Sonko, O.Y. Gudymenko,O.M. Hreshchuk, I.P. Vorona, V.M. Dzhagan, V.O. Yukhymchuk

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine

Abstract: 

The setup for growing single-crystal high-melting-point oxides using top-seeded solution growth method was modified to provide controlled regulation of the crucible bottom temperature. The modified setup was used for growing bulk KTaO3 single crystals, a material with a unique combination of high dielectric constant and other properties in demand in various fields including electronic and optical industries as well as the development of highly sensitive and compact radio-spectroscopic instruments. The quality of KTaO3 single crystals grown in the modified setup was analyzed by several methods, and high crystallinity and purity of the samples were demonstrated.

Keywords: 
Potassium tantalite, modified growth procedure, incipient ferroelectric, lattice dynamics, crystallinity, purity.

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