V.V.Artamonov, M.Ya.Valakh, N.I.Klyui,
V.P.Melnik, B.N.Romanyuk, V.G.Popov, V.A.Yukhimchuk
Received December 2, 1997
Effect of carbon additive
atoms on the SiO2 phase nucleation and growth at a low-dose
(1-2)*10 17cm-2 implantation of O+ ions into
Si has been investigated. The distribution profile of oxygen atoms has
been shown to vary with the implanted C+ ions energy. Distribution
of mechanical stresses in the subsurface Si layer afted O+ and
C+ ions implantation and subsequent thermal annealing has been
studied. The two-step implantation of O+ ions at the total dose
2*10 17cm-2 has been shown to result in the formation
of an almost stoichiometric SiO2 layer.