Effect of ultrasound treatment of silicon IMPATT diodes on reverse branches of their I-V curves


Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauki Ave., 252650 Kyiv, Ukraine

Received December 1, 1997

Ultrasound treatment of packaged silicon double-drift IMPATT diodes was performed. It resulted in both substantial reduction of the diode reverse current and improvement of the I-V curve stability. Subsequent outdoors exposure of diodes for 3 months did not eliminate the above effects.

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