Photoreceivers with Schottky barrier based on doped ZnSe crystals for UV radiation parameters metering devices

A.A.Avdeenko, L.P.Gal`chinetskii, G.Leo*, V.P.Makhniy, Yo.Popowski*, V.D.Ryzhikov, N.G.Starzhinskiy

Institute for Single Crystals, National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine *Hospital of Geneva University, 1211 Geneva, Switzerland

Received January 12, 2000

Characteristics of surface-barrier photodiodes based on n-ZnSe(Te,O)-Ni structure intended for UV radiation measurements in different biologically active spectral ranges. The barrier height phi0 varies from 1.2 to 2.0 eV, the dark current density J0, from 10-16 to 10-23 A/cm2, depending on the doping level. The light sensitivity range is 0.20 to 0.47 mum, the maximum monochromatic sensitivity Slambda, 0.1 to 0.15 A/W, the detecting ability and quantum efficiency at 300 K are not less than 10-15W*cm-2*Hz-1/2 and 0.3 to 0.4 electron/quantum, respectively. The relative sensitivity variation at lambda <= 0.4 mum within temperature range 230-350 K does not exceed 0.1 %/K. Basing on those Schottky photodiodes with appropriate light filters, compact devices have been developed to measure UV radiation parameters and material protecting properties (SP Factor) in UVA (315-400 nm) and UVB (280-315 nm) ranges.

Previous | Contents Next