Funct. Mater. 2024; 31 (4): 516-519.
Effect of annealing temperature on the structural and optical properties of SnO2 thin films elaborated by sol-gel technique
1Applied Chemistry and Renewable Energy Laboratory, Department of Materials Sciences, University Larbi Tébessi - Tébessa, Constantine Road, Tébessa 12002, Algeria
2 Applied and Theoretical Physics Laboratory, Department of Materials Sciences, University Larbi Tébessi - Tébessa, Constantine Road, Tébessa 12002, Algeria
3 Department of Material Science, Faculty of Natural Sciences and Life, University Larbi Tébessi - Tébessa, Constantine Road, 12002, Tébessa – Algeria
In this study, the influence of annealing temperature on the structural and optical properties of SnO2 thin films was investigated. SnO2 thin films were prepared by sol–gel deposition on glass substrates at room temperature and then annealed at different temperatures (300, 400 and 500°C) in air for two hours. The obtained films were characterized by Raman spectroscopy and UV–Vis spectrophotometry techniques. A single-phase rutile structure was revealed by Raman spectroscopy analysis. The optical measurements have shown that all the films have a high transparency (75-85%) in the visible spectral range, and the optical band gap increases from 3.68 to 3.89 eV with increasing annealing temperature.
1. Y. Mouchaal, G. Louarn, A. Khelil, M. Morsli, N. Stephant, A. Bou, T. Abachi, L. Cattin, M. Makha, P. Torchio, J.C. Bernède, Vacuum, 111 (2015) 32-41.
2. C.Y. Kim, D.H. Riu, Thin Solid Films, 519 (2011) 3081–3085.
3. R. E. Presley, C.L. Munsee, C.H. Park, D. Hong, J.F. Wager, D.A. Keszler, J. Phys. D: Appl. Phys., 37 (2004) 2810–2813.
4. M. L.L.Chi, J. K.Chou, W.Y. Chung,, T. P. Sun, S.K.Hsiung, Mater. Chem. Phys., 63 (2000) 19–23.
5. M. R.Cassia-Santos, V. C. Sousa, M. M.Oliveir, F. R. Sensato, W. K.Bacelar J. W. Gomes, Mater. Chem. Phys., 90 (2005) 1–9.
6. X. Du, Y. Du, S. M. George, J. Phys. Chem. A, 112 (2008) 9211–9219.
7. A. F. Khan, M. Mehmood, M. Aslam, M. Ashraf, Applied Surface Science, 256 (2010) 2252–2258.
8. M. Batzill, U. Diebold, Prog. Surf. Sci., 79 (2005) 47–154.
9. P. D. Borges, L. M. R. Scolfaro, H. W. Leite Alves, E. F. da Silva, Theor. Chem. Acc., 2010, 126, 39–44.
10. C. M. Ghimbeu, R.C.V. Landschoot, J. Schoonman, M. Lumbreras, Journal of the European Ceramic Society, 27 (2007) 207–213.
11. Z. Jiang, Z. Guo, B. Sun, Y. Jia, M. Li, J. Liu, Sensors and Actuators B, 145 (2010) 667–673.
12. Z.W. Chen, H.J. Zhang, Z. Li, Z. Jiao, M.H. Wu, C.H. Shek, C.M.L. Wu, J.K.L. Lai, Acta Materialia, 57 (2009) 5078–5082.
13. J. Zhao, X.J. Zhao, J.M. Ni, H.Z. Tao, Acta Materialia, 58 (2010) 6243–6248.
14. S. Shukla, S. Patil, S.C. Kuiry, Z. Rahman, T. Du, L. Ludwig, C. Parish, S. Seal, Sensors and Actuators, B 96 (2003) 343–353.
15. R. L. Mishra, K.M. Sheo, S. G. Prakash, J. Ovonic. Res, 5(4) (2009) 77-85.
16. M. Khechba, A. Bouabellou, F. Hanini, S. Touati, J. New Technol. Mater., 07(02) (2017) 72-75.
17. M. Maleki, S. M. Rozati, Bull. Mater. Sci., 36(2) (2013) 217-221.
18. V. Kumar, A. Jain, D. Pratap, D.C. Agarwal, I. Sulania, V. V. Siva Kumar, A. Tripathi, S.Varma, R.S. Chauhan, Adv. Mat. Lett., 4(6) (2013) 428-432.
19. H. Kim, R.C.Y. Auyeung, A. Piqué, Thin Solid Films, 516 (2008) 5052–5056.
20. P. Venkateswara Reddy, B. Sankara Reddy, S. Venkatramana Reddy, Inter. J. of Chem. Tech. Res., 6 (3) (2014) 2168-2170.
21. A.F. Khan, M. Mehmood, A.M. Rana, M.T. Bhatti, A. Mahmood, Chin. Phys. Lett., 7 (2009) 077803.
22. A. Dieguez, A. R. Rodrıguez, A. Vila, J.R. Morante, Journal of Applied Physics, 90(3) (2001) 1550–1557.
23. D.C. Woo, C.Y. Koo, H.C. Ma, H.Y. Lee, Transactions on electrical and electronic materials, 13 (5) (2012) 241-244.
24. R. Mariappan, V.Ponnuswamy, P.Suresh, R.Suresh, M.Ragavendar, C. Sankar, Materials Science in Semiconductor Processing, 16 (2013) 825–832.
25. B. Pejova, I. Grozdanov, Thin Solid Films, 515(13) (2007) 5203-5211.
26. J. Tauc, Amorphous and liquid semiconductors, Plenum Press, 1974, London.
27. S. K. Haza′a, IOSR Journal of Applied Physics, 7(1) (2015) 59-63.