Funct. Mater. 2025; 32 (3): 487-497.

doi:https://doi.org/10.15407/fm32.03.487

Quaternary crystals CdZnTeSe: Growth via the vertical Bridgman method with different compositions of raw materials

S.V. Naydenov1, O.K. Kapustnyk1, I.M. Pritula1, D.S. Sofronov1, I.S. Terzin1, N.O. Kovalenko1,2

1 Institute for Single Crystals, SSI "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Nauky Ave., 61072 Kharkiv, Ukraine
2 Helmut-Schmidt-Universität, Holstenhofweg 85, 22043 Hamburg, Germany

Abstract: 

Indium-doped semiconductor crystals CdZnTeSe with various compositions were grown via the vertical Bridgman method under high-pressure argon. For the first time, these crystals were obtained via a combined method from a mixture of single and binary starting components. A theoretical analysis of the permissible reactions for obtaining multicomponent CdZnTeSe crystals from various compositions of starting materials was performed. The homogeneity of the distribution of the atomic composition of the obtained crystals and the electrical resistance (in the dark and under illumination) were studied. Crystals grown via the new combined method demonstrated the best homogeneity of composition and electrophysical properties.

Keywords: 
Crystal growth, High Pressure Bridgman method, Semiconductors II-VI,CdZnTeSe solid solutions, In-doped materials

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