Funct. Mater. 2016; 23 (3): 387-393.
Bi nanolines characterization by linear optical methods
T.Shevchenko National University of Kyiv,64/13 Volodymyrska Str., 01601 Kyiv, Ukraine
The present paper dedicated to experimental investigations of optical properties of Bi/Si(001) interfaces and Bi nanolines in a wide spectral range (1eV). The experimental study of optical absorption spectrum showed the widening of the optical band gap of Bi/Si(001) interfaces with increasing the bismuth coverage, whereas after nanolines formation the width of the optical band gap decreases. Features of the experimentally obtained reflectance anisotropy spectra and surface differential reflectance spectra concerned with changing of the silicon surface reconstruction from 2x1 to 1x1 with the increasing of the bismuth covering degree from 0.5 ML to 1 ML. The experimental study of reflectance anisotropy spectra and surface differential reflectance spectra of Bi nanolines shows that the bismuth atoms are still present on the surface of the substrate in small amount, but the optical properties of such structures are determined by Si dimers.
1. D.J.Eaglesham, M.Cerullo, Phys. Rev. Lett., 64, 1943 (1990).
http://dx.doi.org/10.1103/PhysRevLett.64.1943
2. N.V.Nguyen, D.Chandler-Horowitz, P.M.Amirtharaj, J.G.Pellegrino, Appl. Phys. Lett., 64, 2688 (1994).
http://dx.doi.org/10.1063/1.111492
3. L.Fazi, C.Hogan, L.Persichetti et al., Phys. Rev. B, 88, 195312 (2013).
http://dx.doi.org/10.1103/PhysRevB.88.195312
4. J.Wang, Z.Huang, H.Duan et al., Acta Mechanica Solida Sinica, 24, 52 (2011).
http://dx.doi.org/10.1016/S0894-9166(11)60009-8
5. A.Hidehito, Y.Tatsuya, Y.Kenji et al., Surf. Sci., 609, 157 (2003).
6. T.V.Afanasieva, I.F.Koval, N.G.Nakhodkin, Surf. Sci., 507, 787 (2002)
7. W.Dorsch, S.Christiansen, M.Albrecht et al., Surf. Sci., 331-333, 896 (1995).
http://dx.doi.org/10.1016/0039-6028(95)00152-2
8. T.V.Afanasieva, Ukr. J. Phys., 60, 130 (2015).
http://dx.doi.org/10.15407/ujpe60.02.0130
9. M.Richter, J.C.Woicik, J.Nogami et al., Phys. Rev. Lett., 65, 3417 (1990).
http://dx.doi.org/10.1103/PhysRevLett.65.3417
10. J.Nogami, A.A.Baski, C.F.Quate, Appl. Phys. Lett., 58, 475 (1991).
http://dx.doi.org/10.1063/1.104612
11. D.H.Rich, F.M.Leibsle, A.Samsavar et al., Phys. Rev. B, 39, 12758 (1989).
http://dx.doi.org/10.1103/PhysRevB.39.12758
12. I.F.Koval, P.V.Melnik, N.G.Nakhodkin et al., Surf. Sci., 331-333, 585 (1995).
http://dx.doi.org/10.1016/0039-6028(95)00322-3
13. I.F.Koval, P.V.Melnik, N.G.Nakhodkin et al., Surf. Sci., 384, L844 (1997).
http://dx.doi.org/10.1016/S0039-6028(97)00285-9
14. T.Bork, W.E.McMahon, J.M.Olson, T.Hannappel, J. Cryst. Growth, 298, 54 (2007).
http://dx.doi.org/10.1016/j.jcrysgro.2006.10.048
15. V.A.Funtikov, N.E.Antonova, Glass Phys. Chem., 33, 183 (2007).
http://dx.doi.org/10.1134/S1087659607020150
16. A.Sassella, A.Borghesi, M.Campione et al., Appl. Phys. Lett., 89, 261905 (2006).
http://dx.doi.org/10.1063/1.2423322
17. C.Noguez, C.Beitia, W.Preyss et al., Phys. Rev. Lett, 76, 4923 (1996).
http://dx.doi.org/10.1103/PhysRevLett.76.4923
18. O.Pluchery, R.Coustel, N.Witkowski, Y.Borensztein, J. Phys. Chem. B, 110, 22635 (2006).
http://dx.doi.org/10.1021/jp063988d
19. Y.Borensztein, Phys. Status Solidi (A), 202, 1313 (2005).
http://dx.doi.org/10.1002/pssa.200460915
20. M.Palummo, G.Onida, R.Del Sole, B.S.Mendoza, Phys. Rev. B, 60, 2522 (1999).
http://dx.doi.org/10.1103/PhysRevB.60.2522
21. T.Yasuda, M.Nishizawa, N.Kumagai et al., Thin Solid Films, 455-456, 759 (2004).
http://dx.doi.org/10.1016/j.tsf.2003.11.262
22. L.Mantese, U.Rossow, D.E.Aspnes, Appl. Surf. Sci., 107, 35 (1996).
http://dx.doi.org/10.1016/S0169-4332(96)00479-5
23. J.D.O'Mahony, J.F.McGilp, F.M.Leibsle et al., Semicond. Sci. Technol., 8, 495 (1993).
http://dx.doi.org/10.1088/0268-1242/8/4/003
24. R.Ehlert, J.Kwon, M.C.Downer, Phys. Status Solidi (C), 5, 2551 (2008).
http://dx.doi.org/10.1002/pssc.200779124
25. K.Miki, J.H.G.Owen, D.R.Bowler et al., Surf. Sci., 421, 397 (1999).
http://dx.doi.org/10.1016/S0039-6028(98)00870-X
26. A.A Goloborodko, M.V.Epov, L.Y.Robur, T.V.Rodionova, J. Nano-Electron. Phys., 6, 020021 (2014).
27. T.V.Rodionova, A.S.Sutyagina, A.G.Gumenyuk, L.Y.Robur, J. Nano- and Electron. Phys., 7, 01033 (2015).
28. J.D.E.McIntyre, D.E.Aspnes, Surf. Sci., 24, 417 (1971).
http://dx.doi.org/10.1016/0039-6028(71)90272-X
29. V.V.Buchenko, A.A.Goloborodko, in: Proc. SPIE 9809, Twelfth Intern. Conf. Correlation Optics, Chernivtsi, Ukraine (2015), p.98090N-1.
30. Y.Borensztein, O.Pluchery, N.Witkowski, Phys. Rev. Lett. 95, 1174021 (2005).
http://dx.doi.org/10.1103/PhysRevLett.95.117402
31. D.R.Bowler, J.H.G.Owen, J. Phys.:Condens. Matter 14, 6761 (2002).
http://dx.doi.org/10.1088/0953-8984/14/26/314
32. J.H.G.Owen, K.Miki, H.Koh, Phys. Rev. Lett., 88, 226104 (2002).
http://dx.doi.org/10.1103/PhysRevLett.88.226104
33. D.E.Aspnes, A.A.Studna, Phys. Rev. Lett., 54, 1956 (1985).
http://dx.doi.org/10.1103/PhysRevLett.54.1956
34. H.Touir, P.Roca i Cabarrocas, Phys. Rev. B, 65, 155330 (2002).
http://dx.doi.org/10.1103/PhysRevB.65.155330
35. A.P.Lenham, D.M.Treherne, R.J.Metcalfe, J. Opt. Soc. Am., 55, 1072 (1965).
http://dx.doi.org/10.1364/JOSA.55.001072
36. P.Y.Wang, A.L.Jain, Phys. Rev. B, 2, 2978 (1970).
http://dx.doi.org/10.1103/PhysRevB.2.2978
37. V.V.Buchenko, A.A.Goloborodko, T.V.Afanasieva, Materialwissenschaft und Werkstofftechnik, 47, 120 (2016).
http://dx.doi.org/10.1002/mawe.201600479
38. S.A.Kovalenko, M.P.Lisitsa, Semicond. Phys., Quant. Electron. & Optoelectron., 4, 352 (2001).
39. L.V.Poperenko, A.A.Goloborod'ko, N.V.Epov, J. Appl. Spectr., 82, 744 (2015).
http://dx.doi.org/10.1007/s10812-015-0174-0
40. P.Y.Yu, M.Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, Springer, Berlin, Heidelberg (1996).
http://dx.doi.org/10.1007/978-3-662-03313-5
41. W.G.Schmidt, S.Glutsch, P.H.Hahn, F.Bechstedt, Phys. Rev. B, 67, 853071 (2003).
42. C.Hogan, R.Del Sole, G.Onida, Phys. Rev. B, 68, 354051 (2003).
43. A.Hermann, W.G.Schmidt, F.Bechstedt, Phys. Rev. B, 71, 1533111 (2005).
http://dx.doi.org/10.1103/PhysRevB.71.153311
44. W.G.Schmidt, F.Bechstedt, J. Bernholc, Phys. Rev. B, 63, 045322 (2001).
http://dx.doi.org/10.1103/PhysRevB.63.045322
45. S.G.Jaloviar, Jia-Ling Lin, Feng Liu et al., Phys. Rev. Lett., 82, 791 (1999).
http://dx.doi.org/10.1103/PhysRevLett.82.791
46. R.Shioda, J. van der Weide, Phys. Rev. B, 57, R6823 (1998).
http://dx.doi.org/10.1103/PhysRevB.57.R6823