Funct. Mater. 2026; 32 (1): 121-126.
Advances in organic field-effect transistors with polymeric gate dielectrics: A short review
1 Post Graduate and Research Department of Physics, Sree Krishna College Guruvayur, affiliated to the University of Calicut, Thrissur, 680102, India
2 School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, 686560, India
3 Department of Physics, St. Gregorios College, affiliated to the University of Kerala, Kottarakkara, 691531 India
Organic field-effect transistors (OFETs) have emerged as promising components in flexible and low-cost electronic applications due to their mechanical flexibility, compatibility with solution processing, and the ability to tune electrical properties. A critical element in OFET performance is the gate dielectric, with polymeric dielectrics such as PMMA, PVP, and polystyrene offering notable advantages in terms of processability, dielectric strength, and interface engineering. This review presents a comprehensive analysis of OFETs utilizing polymeric gate dielectrics, with a focus on the deposition of organic semiconductors by spin-coating and thermal evaporation methods. The review discusses how the interaction between polymer dielectrics and semiconductors affects charge transport, interface traps, threshold voltage, and overall device stability. Key device architectures including bottom-gate and top-gate configurations are evaluated, highlighting performance trends and material selection strategies. Finally, new designs such as bilayer dielectrics, organic–inorganic hybrid systems, and low-voltage organic field-effect transistors are considered to address issues related to environmental sensitivity and lifetime. This review aims to guide future research in optimizing material combinations and fabrication techniques to advance the practical application of polymeric-gated OFETs in next-generation electronics.
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